Old Dominion University
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Frank Batten College of Engineering and Technology

Department of Electrical and Computer Engineering

Dr. Gon Namkoong

Associate Professor 


Dr. Gon Namkoong received his B.S. in the Department in Physics from Chonbuk National University,South Korea in 1996 and Ph.D. degree in the Department of Electrical and Computer Engineering at the Georgia Institute of Technology in 2003. Dr. Namkoong then worked as Post Doctoral Fellow and Research Engineer II at the Georgia Institute of Technology till he jointed the Faculty of Department of Electrical and Computer Engineering at the ODU and ARC in 2007. Dr. Namkoong's research interest is in the development of nitride/ZnO-based thin films, nanorods and their devices on innovative substrate materials as well as applying new nanoscale thin film growth techniques to facilitate material and device improvement. Dr. Namkoong has been intimately involved in the creation of nanoscale optoelectric/electronic devices and novel integration technologies to overcome current device performance limitations allowing for new levels of multifunctional devices. He has authored/co-authored over 60 research papers/presentations as well as numerous technical reports and invention disclosures.

Selected Papers:

  1. Gon Namkoong, W. Alan Doolittle, Maria Losurdo, Pio Capezzuto, and Giovanni Bruno, Bill Nemeth and Jeff Nause, "III-Nitrides on Oxygen and Zinc Face ZnO Substrates", Applied Physics Letters 87,184104 (2005)
  2. Gon Namkoong, Kyoung-Keun Lee, Shannon M. Madison, Walter Henderson, W. Alan Doolittle, and Stephen E. Ralph, "III-Nitride Integration on Ferroelectric Materials of Lithium Niobates by Molecular Beam Epitaxy", Applied Physics Letters 87, 171107 (2005)
  3. G. Bu, D. Ciplys, M. S. Shur, G. Namkoong, W. A. Doolittle, and W. D. Hunt, "Leaky surface acoustic waves in Z-LiNbO3 substrates with epitaxial AIN overlays", Applied Physics Letters, vol. 85, pp. 3313, 2004
  4. Gon Namkoong, W.A. Doolittle, A.S. Brown, M. Losurdo, P. Capezzuto, and G. Bruno, "Role of sapphire nitridation temperature on GaN growth by plasma assisted molecular beam epitaxy: Part I. Impact of the nitridation chemistry on material characteristics", J. Appl. Phys., vol. 91p.2499, 2002
  5. M. Losurdo, P. Capezzuto, G. Bruno, Gon Namkoong, W.A. Doolittle, and A.S. Brown,       "Role of sapphire nitridation temperature on GaN growth by plasma assisted molecular beam epitaxy: Part II. Interplay between chemistry and structure of layers", J. Appl.Phys., vol.91, p. 2508, 2002

Contact Information:

Office: Applied Research Center, 12050 Jefferson Avenue, Suite 717          
            Newport News VA 23606
Phone: (757) 269-5349
Email: gnamkoon@odu.edu